PART |
Description |
Maker |
IPP50CN10NG IPP50CN10NG10 IPI50CN10NG IPB50CN10NG |
OptiMOS2 Power-Transistor
|
Infineon Technologies AG
|
IPP08CN10LG |
OptiMOS2 Power-Transistor
|
Infineon Technologies AG
|
IPP16CN10LG |
OptiMOS2 Power-Transistor
|
Infineon Technologies AG
|
BSC027N03SG |
OptiMOS2 Power-Transistor
|
Infineon Technologies AG
|
IPB16CN10NG IPP16CN10NG10 IPI16CN10NG IPD16CN10NG |
OptiMOS2 Power-Transistor
|
Infineon Technologies AG
|
IPP10N03LBG IPP10N03LBG08 |
OptiMOS2 Power-Transistor
|
Infineon Technologies AG
|
BSO150N03 |
Low Voltage MOSFETs - OptiMOS? Power MOSFET, 30V, SO8, RDSon = 15mOhm, 9.1A, LL, dual OptiMOS2 Power-Transistor
|
INFINEON[Infineon Technologies AG]
|
BSO104N03S |
Low Voltage MOSFETs - OptiMOS? Power MOSFET, 30V, SO8, RDSon = 9.7mOhm, 13A, LL OptiMOS2 Power-Transistor
|
INFINEON[Infineon Technologies AG]
|
BSC119N03S BSC119N03SG Q7042S4292 Q7042-S4292 INFI |
OptiMOS®2 - SuperSO8, SO8, DPAK OptiMOS2 Power-Transistor OptiMOS2功率晶体
|
Infineon Technologies A... INFINEON[Infineon Technologies AG]
|
Q67042S4291 BSC094N03S BSC094N03SG Q67042-S4291 |
OptiMOS2 Power-Transistor OptiMOS2功率晶体 OptiMOS®2 - SuperSO8, SO8, DPAK
|
INFINEON[Infineon Technologies AG]
|
BSS806N |
OptiMOS2 Small-Signal-Transistor Ultra Logic level (1.8V rated) Avalanche rated
|
TY Semiconductor Co., Ltd
|